Thermoelectric device produced by quantum confinement in nanostructures
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United States of America Patent
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Issued Date -
Apr 19, 2007
app pub date -
Oct 14, 2005
filing date -
Oct 14, 2005
priority date (Note) -
Abandoned
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Abstract
The present invention provides a thermoelectric device comprising a film of thermoelectric material deposited on a substrate, and one or more electrodes located within the thermoelectric film, wherein the thermoelectric film is partially oxidized to form an oxide layer, which is melted to form an electrical insulating and protective barrier on a top surface of the film.
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