US Patent Application No: 2007/0084,499

Thermoelectric device produced by quantum confinement in nanostructures

Stats

Apr 19, 2007
Publication date
Oct 14, 2005
filing date
11/250,606
serial no
ABAN
status

Importance

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Abstract

The present invention provides a thermoelectric device comprising a film of thermoelectric material deposited on a substrate, and one or more electrodes located within the thermoelectric film, wherein the thermoelectric film is partially oxidized to form an oxide layer, which is melted to form an electrical insulating and protective barrier on a top surface of the film.

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First Claim

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Patent Owner(s)

Patent Owner	Address	Total Patents
ZT3 TECHNOLOGIES, INC.	THOUSAND OAKS, CA, CA	5

International Classification(s)

H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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[Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Dutta, Biprodas	Silver Spring, MD	19	42

Patent Citation Ranking

Forward Cites

Patent Info	# Cites	Year
ZT3 TECHNOLOGIES, INC. (3)
7,767,564 Nanowire electronic devices and method for producing the same	3	2007
7,915,683 Nanowire electronic devices and method for producing the same	0	2010
8,143,151 Nanowire electronic devices and method for producing the same	0	2011

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11.5 Year Payment	$7400.00	$3700.00	$1850.00	Oct 19, 2018

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