Improving NROM device characteristics using adjusted gate work function

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United States of America Patent

APP PUB NO 20070087503A1
SERIAL NO

11253272

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Abstract

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A method including adjusting a threshold voltage of an NROM (nitride, read only memory) device by adjusting a work function associated with a gate terminal of the NROM device.

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Patent Owner(s)

Patent OwnerAddress
SAIFUN SEMICONDUCTORS LTDISRAEL NETANYA NETANYA CENTRAL DISTRICT

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lusky, Eli Tel Aviv, IL 45 369

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