Deep diffused thin photodiodes
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United States of America Patent
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Aug 18, 2009
Grant Date -
Apr 26, 2007
app pub date -
Oct 25, 2005
filing date -
Oct 25, 2005
priority date (Note) -
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Abstract
This invention comprises photodiodes, optionally organized in the form of an array, including p+ deep diffused regions or p+ and n+ deep diffused regions. More specifically, the invention permits one to fabricate thin 4 inch and 6 inch wafer using the physical support provided by a n+ deep diffused layer and/or p+ deep diffused layer. Consequently, the present invention delivers high device performances, such as low crosstalk, low radiation damage, high speed, low leakage dark current, and high speed, using a thin active layer.
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