Ferroelectric capacitor with parallel resistance for ferroelectric memory
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United States of America Patent
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Mar 18, 2008
Grant Date -
Apr 26, 2007
app pub date -
Dec 7, 2006
filing date -
Dec 3, 2004
priority date (Note) -
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Abstract
Ferroelectric memory cells (3) are presented, in which a cell resistor (R) is integrated into the cell capacitor (C) to inhibit charge accumulation or charge loss at the cell storage node (SN) when the cell (3) is not being accessed while avoiding significant disruption of memory cell access operations. Methods (100, 200) are provided for fabricating ferroelectric memory cells (3) and ferroelectric capacitors (C), in which a parallel resistance (R) is integrated in the capacitor ferroelectric material (20) or in an encapsulation layer (46) formed over the patterned capacitor structure (C).
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