Thin-film device and method of manufacturing same
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United States of America Patent
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Issued Date -
May 3, 2007
app pub date -
Oct 19, 2006
filing date -
Oct 31, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A thin-film device comprises a substrate and a capacitor provided on the substrate. The capacitor incorporates: a lower conductor layer disposed on the substrate; a dielectric film disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The thickness of the dielectric film falls within a range of 0.02 to 1 .mu.m inclusive and is smaller than the thickness of the lower conductor layer. The surface roughness in maximum height of the top surface of the lower conductor layer is equal to or smaller than the thickness of the dielectric film.
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