Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer

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United States of America Patent

PATENT NO 7507988
APP PUB NO 20070105350A1
SERIAL NO

11619040

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Abstract

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. A strained epitaxial Si layer is located atop the substantially relaxed SiGe layer and at least one alternating stack including a bottom relaxed SiGe layer and an top strained Si layer located on the strained epitaxial Si layer.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES INCGRAND CAYMAN CAYMAN ISLANDS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bedell, Stephen W Wappingers Falls , US 412 6001
Chen, Huajie Wappingers Falls , US 71 2360
Domenicucci, Anthony G New Paltz , US 37 638
Fogel, Keith E Mohegan Lake , US 270 4322
Sadana, Devendra K Pleasantville , US 897 10959

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