Polycide fuse with reduced programming time
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United States of America Patent
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N/A
Issued Date -
May 17, 2007
app pub date -
Nov 15, 2005
filing date -
Nov 15, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
In one embodiment, a polycide fuse is provided that includes: a polysilicon layer; a silicide layer formed on the polysilicon layer; and a silicon nitride layer formed on the silicide layer by RTCVD, the silicon nitride layer having a relatively low hydrogen concentration and relatively low mechanical stress.
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