METHODS OF PRODUCING A SEMICONDUCTOR BODY AND OF PRODUCING A SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
May 17, 2007
app pub date -
Nov 16, 2006
filing date -
Nov 17, 2005
priority date (Note) -
Abandoned
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Abstract
A source melt is formed by melting a source material comprising a semiconductor material. A portion of the source melt is directionally recrystallized to form an intermediate crystal and a residue portion that includes impurities. The residue portion is disposed of. Subsequently, at least a portion of the intermediate crystal is melted in a container to form a pool comprising at least the portion of the melted intermediate crystal. A semiconductor body is produced, by crystallising at least part of the pool. The semiconductor body may subsequently be transformed, for instance from an ingot form to a wafer form. A semiconductor device, such as one comprising a photovoltaic cell, may be produced from such a wafer.
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