CaF2 single crystals with increased laser resistance, method for their preparation and use thereof
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United States of America Patent
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Issued Date -
May 24, 2007
app pub date -
Sep 7, 2006
filing date -
Sep 19, 2005
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Abstract
A calcium fluoride single crystal with increased radiation resistance can be prepared by growing under controlled conditions of solidification from a melt of a crystal raw material containing a dopant affording ions of Al and/or Ga and/or In and/or Tl. Such a single crystal after irra-diation with at least 5.times.10.sup.8 laser pulses having a pulse energy of at least 10 mJ/cm.sup.2 shows at a wavelength of 193 nm an absorption of less than 0.1%/cm.
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