Method and system for performing plasma enhanced atomic layer deposition
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United States of America Patent
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Mar 1, 2011
Grant Date -
May 24, 2007
app pub date -
Nov 18, 2005
filing date -
Nov 18, 2005
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Abstract
A method, computer readable medium, and system for vapor deposition on a substrate that introduce a gaseous film precursor to a process space, increase the volume of the process space from a first size to a second size to form an enlarged process space, introduce a reduction gas to the enlarged process space, and form a reduction plasma from the reduction gas. The system for vapor deposition includes a process chamber including a first process space and further including a second process space that includes the first process space and that has a second volume that exceeds the first volume. The first process space is configured for atomic layer deposition, and the second process space is configured for plasma reduction of a layer deposited in the first process space.
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