Method and system for performing different deposition processes within a single chamber
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United States of America Patent
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Issued Date -
May 24, 2007
app pub date -
Nov 18, 2005
filing date -
Nov 18, 2005
priority date (Note) -
Abandoned
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Abstract
A method, computer readable medium, and system for vapor deposition on a substrate that introduce a first process gas composition to a process space according to a first vapor deposition process, deposit a first film on the substrate, introduce a second process gas composition into a second process space different in size than the first process space, and deposit a second film on the substrate from the second process gas composition. As such, the system includes a process chamber including a first process space having a first volume. The process chamber further includes a second process space that includes at least a part of the first process space and that has a second volume different from the first volume. The first process space is configured for a first chemical vapor deposition, and the second process space is configured for a second chemical vapor deposition.
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