Method And System for Iteratively, Selectively Tuning A Parameter Of A Doped Workpiece Using A Pulsed Laser
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United States of America Patent
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Issued Date -
May 24, 2007
app pub date -
Oct 24, 2006
filing date -
Nov 23, 2005
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method and system for iteratively, selectively tuning a parameter of a doped workpiece, such as the impedance of an integrated semiconductor device, by modifying the dopant profile of a region of relatively low dopant concentration by controlled diffusion of dopants from one or more adjacent regions of relatively higher dopant concentration through melting action caused by one or more laser pulses created by a Q-switched, pulsed laser are disclosed. In particular, the method and system are directed to increasing the dopant concentration of the region of lower dopant concentration, but may also be adapted to decrease the dopant concentration of the region.
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