Memory cell device and manufacturing method
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United States of America Patent
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Oct 6, 2009
Grant Date -
May 24, 2007
app pub date -
Feb 17, 2006
filing date -
Nov 22, 2005
priority date (Note) -
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Abstract
A memory cell device, having a memory material switchable between electrical property states by the application of energy, comprises an electrode, a separation layer against an electrode surface, a hole in the separation layer, a second material in the hole defining a void having a downwardly and inwardly tapering void region. A memory material is in the void region in electrical contact with the electrode surface. A second electrode is in electrical contact with the memory material. Energy passing between the first and second electrodes is concentrated within the memory material so to facilitate changing an electrical property state of the memory material. The memory material may comprise a phase change material. The second material may comprise a high density plasma-deposited material. A method for making a memory cell device is also discussed.
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