Organic semiconductor device and method of fabricating the same
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United States of America Patent
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Issued Date -
Jun 7, 2007
app pub date -
Aug 1, 2006
filing date -
Dec 5, 2005
priority date (Note) -
Abandoned
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Abstract
An organic semiconductor device and a method of fabricating the same are provided. The device includes: a first electrode; an electron channel layer formed on the first electrode; and a second electrode formed on the electron channel layer, wherein the electron channel layer comprises: a lower organic layer formed on the first electrode; a nano-particle layer formed on the lower organic layer and including predetermined sizes of nano-particles that are spaced a predetermined distance apart from each other; and an upper organic layer formed over the nano-particle layer. Accordingly, a highly integrated organic semiconductor device can be fabricated by a simple fabrication process, and nonuniformity of devices due to threshold voltage characteristics and downsizing of the device can resolved, so that a semiconductor device having excellent performance can be implemented.
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