Barium Titanate Thin Films with Titanium Partially Substituted by Zirconium, Tin or Hafnium
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United States of America Patent
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Issued Date -
Jun 14, 2007
app pub date -
Oct 2, 2006
filing date -
Oct 21, 2005
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Abandoned
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Abstract
Disclosed are high permittivity (dielectric constant), thin film CSD barium titanate based dielectric compositions that have titanium partially substituted by zirconium, tin or hafnium. The compositions show capacitance as a function of temperature that better satisfies the X7R requirements.
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