Semiconductor device manufacturing method
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United States of America Patent
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Issued Date -
Jun 14, 2007
app pub date -
Oct 16, 2006
filing date -
Dec 8, 2005
priority date (Note) -
Abandoned
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Abstract
After a Ni film is deposited on a substrate on which a gate silicon layer is formed, a mask is formed above the gate silicon layer. Then, the Ni film is etched so as to leave a part of the Ni film which is located on the gate silicon layer. This restricts sideways supply of Ni present on the sides of the gate silicon layer. Thereafter, thermal treatment is performed to silicidate the gate silicon layer entirely.
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