Etch resistant wafer processing apparatus and method for producing the same
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United States of America Patent
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Nov 4, 2008
Grant Date -
Jun 21, 2007
app pub date -
Dec 30, 2005
filing date -
Dec 21, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.
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