PROCESS FOR PRODUCING A FREE-STANDING III-N LAYER, AND FREE-STANDING III-N SUBSTRATE
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United States of America Patent
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Issued Date -
Jun 21, 2007
app pub date -
Dec 20, 2006
filing date -
Dec 21, 2005
priority date (Note) -
Abandoned
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Abstract
A process for producing a free-standing III-N layer, where III denotes at least one element from group III of the periodic system, selected from Al, Ga and In, comprises depositing on a Li(Al,Ga)Ox substrate, where x is in a range between 1 and 3 inclusive, at least one first III-N layer by means of molecular beam epitaxy. A thick second III-N layer is deposited on the first III-N layer by means of a hydride vapor phase epitaxy. During cooling of the structure produced in this way, the Li(Al,Ga)Ox substrate completely or largely flakes off the III-N layers, or residues can be removed if necessary, by using etching liquid, such as aqua regia. A free-standing III-N substrate being substantially free of uncontrolled impurities and having advantageous properties is provided.
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