Phase change memory cell and manufacturing method
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United States of America Patent
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Mar 30, 2010
Grant Date -
Jun 28, 2007
app pub date -
Dec 18, 2006
filing date -
Nov 28, 2005
priority date (Note) -
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Abstract
A phase change memory cell includes first and second electrodes electrically coupled by a phase change element. At least a section of the phase change element comprises a higher reset transition temperature portion and a lower reset transition temperature portion. The lower reset transition temperature portion comprises a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion. The phase change element may comprise an outer, generally tubular, higher reset transition temperature portion surrounding an inner, lower reset transition temperature portion.
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