Vertically emitting, optically pumped semiconductor laser comprising an external resonator
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United States of America Patent
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Issued Date -
Jul 12, 2007
app pub date -
Dec 11, 2006
filing date -
Dec 9, 2005
priority date (Note) -
Abandoned
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Abstract
A vertically emitting semiconductor laser comprising an external resonator (7), a semiconductor body (1), and at least one pump radiation source (9). The semiconductor body (1) has a quantum layer structure (2) as an active zone comprising quantum layers (3) and barrier layers (4) lying in between. The semiconductor body (1) furthermore has a Bragg reflector (5) on one side of the quantum layer structure (2). The Bragg reflector (5) comprises layers which are arranged aperiodically with respect to one another in such a way that an absorption of the pump radiation (10) is essentially effected within the quantum layer structure (2).
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