Radiation-sensitive resin composition, process for producing the same and process for producing semiconductor device therewith
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United States of America Patent
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Issued Date -
Jul 12, 2007
app pub date -
Feb 5, 2004
filing date -
Feb 10, 2003
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A chemically amplified radiation sensitive resin composition comprising at least (1) a base resin that is an alkali-soluble resin or an alkali-insoluble or slightly alkali-soluble resin protected by an acid dissociable protecting group wherein the amount of an ultrahigh molecular weight component whose weight average molecular weight determined by polystyrene standards as measured by gel permeation chromatography with multi angle laser light scattering method is one million or more is 1 ppm or less, (2) a photo-acid generator capable of generating an acid by irradiation of radiation, and (3) a solvent. This radiation sensitive resin composition is applied onto an object to be processed 2 to form a photoresist film 3. The photoresist film is exposed and then developed to form a fine resist pattern 4 with 0.2 .mu.m or less in pattern width. Thereafter, dry etching is conducted to form a gate electrode, hole shape patterning or grooved shape patterning of a semiconductor device. In this manner, patterning with minimized occurrence of pattern defects such as microbridge can be realized.
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