MEMORY CELL COMPRISING A DIODE FABRICATED IN A LOW RESISTIVITY, PROGRAMMED STATE

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Mar 30, 2007
filing date
Dec 19, 2002

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Abandoned

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Abstract

A memory device includes at least one diode memory cell. The diode is fabricated in a low resistivity, programmed state.

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Patent Owner(s)

Patent Owner	Address
SANDISK TECHNOLOGIES LLC	5080 SPECTRUM DRIVE SUITE 1050W ADDISON TX 75001

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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[Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Herner, S Brad	Palo Alto, CA	125	5975
KUMAR, Tanmay	Pleasanton, CA	106	3388

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MEMORY CELL COMPRISING A DIODE FABRICATED IN A LOW RESISTIVITY, PROGRAMMED STATE

Number of patents in Portfolio can not be more than 2000

United States of America Patent

11693858

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11693858

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