METHOD FOR MAKING AN ELECTRONIC DEVICE INCLUDING A SELECTIVELY POLABLE SUPERLATTICE
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United States of America Patent
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Issued Date -
Jul 19, 2007
app pub date -
Dec 21, 2006
filing date -
Dec 22, 2005
priority date (Note) -
Abandoned
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Abstract
A method for making an electronic device may include forming a selectively polable superlattice comprising a plurality of stacked groups of layers. Each group of layers of the selectively polable superlattice may include a plurality of stacked semiconductor monolayers defining a semiconductor base portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent silicon portions, and at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween. The method may further include coupling at least one electrode to the selectively polable superlattice for selective poling thereof.
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