US Patent Application No: 2007/0166,938

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SEMICONDUCTOR DEVICE WITH HIGH CONDUCTIVITY REGION USING SHALLOW TRENCH

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Abstract

A structure is provided for an integrated circuit with a semiconductor substrate having an opening provided therein. A doped high conductivity region is formed from doped material in the opening and a diffused dopant region proximate the doped material in the opening. A structure is over the doped high conductivity region selected from a group consisting of a wordline, a gate, a dielectric layer, and a combination thereof.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SPANSION LLCSUNNYVALE, CA1943

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Erhardt, Jeffrey P San Jose, CA 16 16
Lingunis, Emmanuil San Jose, CA 8 129
Sahota, Kashmir S Fremont, CA 22 238
Wong, Nga-Ching San Jose, CA 10 16

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