High-throughput printing of semiconductor precursor layer by use of thermal and chemical gradients
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United States of America Patent
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Feb 23, 2006
filing date -
Feb 19, 2004
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Abstract
A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method includes forming a first layer of a first precursor material over a surface of a substrate, wherein the precursor material comprises group IB-chalcogenide and/or group IIIA-chalcogenide particles. The method may include forming at least a second layer of a second precursor material over the first layer, wherein the second precursor material comprises group IB-chalcogenide and/or group IIIA-chalcogenide particles and wherein the second precursor material has a chalcogen content greater than that of the first material. The method may also include heating the first layer and the second layer in a suitable atmosphere to a temperature sufficient to react the particles and to release at least the surplus amount of chalcogen from the chalcogenide particles, wherein the surplus amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio
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