Advanced non-volatile memory array and method of fabrication thereof
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United States of America Patent
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Issued Date -
Jul 26, 2007
app pub date -
Jan 20, 2006
filing date -
Jan 20, 2006
priority date (Note) -
Abandoned
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Abstract
A method for creating a non-volatile memory array includes generating removable mask columns to define bit lines, implanting bit lines into the substrate at least between the columns, depositing oxide filler over the bit lines, removing the mask columns, depositing a polysilicon layer over the array and etching the polysilicon layer into word lines. The polysilicon extends at least into spaces left behind by the removed mask columns. The method also includes performing a dual work integration doping after the word line patterning.
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