Polishing composition and polishing method
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United States of America Patent
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Issued Date -
Aug 2, 2007
app pub date -
Sep 30, 2004
filing date -
Sep 30, 2003
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A first polishing composition is used in chemical mechanical polishing for removing one part of the portion of a conductive layer positioned outside a trench. A second polishing composition is used in chemical mechanical polishing for removing the remaining part of the portion of a conductive layer positioned outside the trench and the portion of a barrier layer positioned outside the trench. The first polishing composition contains a specific surfactant, a silicon oxide, a carboxylic acid, an anticorrosive, an oxidizing agent, and water. The second polishing composition contains colloidal silica, an acid, an anticorrosive, and a completely saponified polyvinyl alcohol.
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