Memory circuit arrangement and method for reading and/or verifying the status of memory cells of a memory cell array

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United States of America Patent

APP PUB NO 20070177428A1
SERIAL NO

11343279

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Abstract

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A memory circuit arrangement includes a memory cell array having a plurality of memory cells. A memory read/verify control circuit controls a read operation and/or a verify operation on one or a plurality of memory cells of the memory cell array. The memory read/verify control circuit is adapted to read and/or verify the status of each memory cell of the memory cell array according to read and/or verify instruction information on memory cell level.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AGAM CAMPEON 1-15 NEUBIBERG 85579
INFINEON TECHNOLOGIES FLASH GMBH & CO KGGERMAN DERLETH DEN DRESDEN FREE STATE OF SAXONY
SAIFUN SEMICONDUCTOR LTDTOPPER BLDG 65 HAMELACHA ST INDUSTRIAL ZONE SOUTH NETANYA 42504

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cohen, Zeev Zichron-Yaakov, IL 22 1297
Maayan, Eduardo Kfar Saba, IL 58 1582
Pissors, Volker Volkersdorf, DE 2 5

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