Method for removing residue containing an embedded metal
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United States of America Patent
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Issued Date -
Aug 9, 2007
app pub date -
Feb 8, 2006
filing date -
Feb 8, 2006
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention provides a method for removing residue from a cavity during the formation of an interconnect structure, a method for manufacturing an interconnect structure using the same, and a method for manufacturing an integrated circuit using the same. The method for removing residue from a cavity during the formation of an interconnect structure, among other steps, may include subjecting residue (410) having an embedded metal therein located within a cavity (310) in a dielectric layer (240) and over at least a portion of a conductive feature (220) to a short duration oxidation process so as to oxidize a substantial portion of the embedded metal, and removing the residue (410) containing the oxidized embedded metal using an etch process.
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