Memory device which comprises a multi-layer capacitor

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United States of America Patent

PATENT NO 8101982
APP PUB NO 20070205449A1
SERIAL NO

11624529

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A memory device is provided. The memory device including memory cells having at least three stacked electrodes spaced apart pairwise by dielectric material so that the pairs of electrodes form respective capacitor layers. The capacitors are connected electrically in parallel to each other. The dielectric material is optionally ferroelectric material, in which case the capacitors are ferrocapacitors.

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Patent Owner(s)

  • SONY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishida, Takehisa Singapore Science Park, II, SG 51 287

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