Manufacture of programmable crossbar signal processor
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United States of America Patent
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app pub date -
May 16, 2007
filing date -
Apr 3, 2006
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Abandoned
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Abstract
A process including a first step of providing a semiconductor wafer doped of a first conductivity type on a first side and doped of a second conductivity type, opposite to the first conductivity type on the second side, a second step of forming a first array of parallel wires having electrical conductivity on the first side, a third step of forming a second array of parallel wires having electrical conductivity on the second side, a fourth step of forming an insulating layer on the first side after the first array of parallel wires is formed, and a fifth step of forming a programmable impedance layer on the second side after the second array of wires is formed.
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