Reactive sputtering chamber with gas distribution tubes
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United States of America Patent
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Issued Date -
Oct 11, 2007
app pub date -
Apr 6, 2006
filing date -
Apr 6, 2006
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.
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