TWO-LAYER FILM AND METHOD OF FORMING PATTERN WITH THE SAME
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United States of America Patent
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app pub date -
Jun 14, 2007
filing date -
Jan 25, 2002
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Abandoned
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Abstract
The invention concerns a lift-off process for patterning layers that are deposited and/or sputtered. The invention provides a two-layer resist and a patterning method using the resist. The patterning method can readily produce burr-free layers on a substrate. The method comprises the steps of: sequentially applying positive radiation-sensitive resin compositions 1 and 2 to form a two-layer laminate; subjecting the two-layer resist to single exposure and development to produce fine patterns having an undercut cross section; depositing and/or sputtering an organic or inorganic thin layer with use of the resist pattern as a mask; and lifting off the resist pattern to leave a pattern of the thin layer in desired shape.
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