Ferroelectric memory with sub bit-lines connected to each other and to fixed potentials

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United States of America Patent

PATENT NO 7558098
APP PUB NO 20070253274A1
SERIAL NO

11739754

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Abstract

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A memory capable of suppressing increase of a chip area thereof while preventing nonselected subarrays from disturbance is obtained. This memory comprises a first transistor for connecting respective sub bit lines with each other, and connects the sub bit lines of the nonselected subarrays with each other through the first transistor and connects the same to fixed potentials arranged on both ends of a memory cell array at least in a read operation.

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Patent Owner(s)

Patent OwnerAddress
OL SECURITY LIMITED LIABILITY COMPANY160 GREENTREE DRIVE SUITE 101 DOVER DE 19904

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Miyamoto, Hideaki 310-20, Arakawa-cho 67 686

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