ITO transparent substrate with high resistance at low-temperature sputtering process and method for producing the same
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United States of America Patent
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Issued Date -
Nov 8, 2007
app pub date -
May 2, 2006
filing date -
May 2, 2006
priority date (Note) -
Abandoned
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Abstract
A method for producing an ITO transparent substrate with a high resistance at a low-temperature sputtering process is provided for mass production. The method is characterized by: a film of ITO mixed with metallic-oxide target and coated with multiple layers provides a transparent capacity. The film can be produced via a production line and further heated and annealed for stabilizing the high resistance thereof.
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