Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal

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United States of America Patent

PATENT NO 7470326
APP PUB NO 20070261632A1
SERIAL NO

11826262

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Abstract

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The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical direction; and a control device for controlling a pulling rate for the silicon single crystal by the pulling-up device, based on the detected position of the crucible.

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Patent Owner(s)

  • SUMITOMO MITSUBISHI SILICON CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sato, Satoshi Yonezawa, JP 196 2715
Suzuki, Youji Yonezawa, JP 22 55

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