High-power optically end-pumped external-cavity semiconductor laser
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United States of America Patent
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Jun 16, 2009
Grant Date -
Nov 15, 2007
app pub date -
Sep 22, 2006
filing date -
May 12, 2006
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Abstract
A high-power optically end-pumped external-cavity semiconductor laser is provided having a laser chip including an active layer and a distributed Bragg reflector (DBR) for emitting light of a fundamental wavelength; an external mirror spaced apart from a first surface of the laser chip and forming a cavity resonator with the DBR; a second harmonic generation (SHG) crystal positioned between the external mirror and the laser chip; and a micro-lens integrated heat sink dissipating heat generated by the laser chip and bonded to a second surface of the laser chip to focus a pumping beam to be incident on the second surface of the laser chip.
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