NON-CONTACT CHEMICAL MECHANICAL POLISHING WAFER EDGE CONTROL APPARATUS AND METHOD
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United States of America Patent
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N/A
Issued Date -
Nov 22, 2007
app pub date -
May 18, 2006
filing date -
May 18, 2006
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Methods and apparatus for controlling a material removal rate at an edge of a wafer during a chemical mechanical polishing (CMP) process are disclosed. According to one aspect of the present invention, a CMP apparatus includes a wafer, a polishing pad to polish a surface of the wafer, a polishing pad structure to rotate the polishing pad over the surface of the wafer, and a wafer chuck to support the wafer. The wafer chuck directly supports a first portion of the wafer that is in physical contact with the wafer chuck and indirectly supports a second portion of the wafer that is not in physical contact with the wafer chuck. The second portion of the wafer is supported by the wafer chuck using a bearing surface arranged between the second portion of the wafer and the wafer chuck.
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