SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Nov 29, 2007
app pub date -
May 24, 2007
filing date -
May 24, 2006
priority date (Note) -
Abandoned
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Abstract
A method of fabricating a semiconductor memory device includes forming a first insulating layer and a sacrificial layer on a substrate. The first insulating layer and the sacrificial layer have an opening therein. A first conductive layer is formed in the opening and on the sacrificial layer. A second insulating layer is formed on the first conductive layer. The second insulating layer, the first conductive layer and the sacrificial layer are then planarized until the first insulating layer is exposed, thereby forming a first conductive pattern and a second insulating layer pattern in the opening. A phase change material layer is formed on the first conductive pattern, the first insulating layer and the second insulating layer pattern. A second conductive pattern is formed on the phase change material layer. A semiconductor memory device and a data processing system adopting the semiconductor memory device are also provided.
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