Method for manufacturing substrate, and vapor deposition apparatus used for the same
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United States of America Patent
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Issued Date -
Dec 6, 2007
app pub date -
May 30, 2007
filing date -
May 31, 2006
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method for manufacturing a substrate according to the present invention includes the steps of positioning a copper layer forming material including a constituent material of a copper layer and a base such that the base faces the copper layer forming material in a position vertically above the copper layer forming material; and vapor-depositing copper on the base by heating the copper layer forming material to a temperature range of 90 to 200.degree. C. and heating the base to a temperature range of 120 to 450.degree. C., thereby forming the copper layer. Thus, a method for manufacturing a substrate that includes a fine copper layer having a high copper purity with safety at low cost, which is suitable for manufacturing a semiconductor substrate, an electronic substrate, etc. is provided, and a vapor deposition apparatus used for the method is provided.
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