Producing thin integrated semiconductor devices
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United States of America Patent
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Mar 9, 2010
Grant Date -
Dec 6, 2007
app pub date -
Jun 1, 2007
filing date -
Jun 1, 2006
priority date (Note) -
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Abstract
Thin integrated semiconductor devices are produced by being embedded in a molding compound matrix in such a way that a composite is formed. The semiconductor devices are first embedded in the matrix and then thinned after being embedded. The thin integrated semiconductor devices are singulated by forming separating cuts into the molding compound matrix between adjacent devices.
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