Apparatus and method for depositing layer on substrate
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United States of America Patent
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N/A
Issued Date -
Dec 6, 2007
app pub date -
May 30, 2007
filing date -
May 31, 2006
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A reactant gas is supplied to a gas inlet port 40B of a reaction chamber 20A from a plurality of gas flow paths 36A. The number of gas flow paths 36A is five or more within a range of one side of the gas inlet port 40B divided in two at the center thereof. The pitch between adjacent gas flow paths 36A is 10 mm or more. A baffle 38 having a plurality of slit holes 38A is disposed upstream of the gas flow paths 36A. The gas flow rates of the respective gas flow paths 36A are adjusted by recurrent calculation using layer growth sensitivity data that defines the relation between the gas flow rates of the respective gas flow paths 36A.
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