Light emitting transistor
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United States of America Patent
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Issued Date -
Dec 13, 2007
app pub date -
Jun 7, 2007
filing date -
Jun 8, 2006
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A light emitting transistor comprises a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on a predetermine region of the collector layer; a collector electrode formed on the collector layer where the base layer is not formed; a first conductivity-type emitter layer formed on a predetermine region of the base layer; a base electrode formed on the base layer where the emitter layer is not formed; an emitter electrode formed on the emitter layer; a first activation layer formed between the collector layer and the base layer; and a second activation layer formed between the base layer and the emitter layer.
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