Solid-state RF power amplifier for radio transmitters
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United States of America Patent
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Mar 23, 2010
Grant Date -
Dec 13, 2007
app pub date -
May 17, 2007
filing date -
May 17, 2006
priority date (Note) -
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Abstract
An RF power amplifier includes first and second field effect transistors having a gate, a source, and a drain, having an output power rating of at least 200 watts, and operating with a drain-to-source voltage that is greater than 50 VDC. The transistors are configured as a push-pull amplifier. The amplifier further includes an RF signal input. A input transformer is connected to the RF signal input. The input transformer has respective balanced outputs connected to the gates of the transistors. A broadband output transformer has a first balanced input connected to the drain of one the transistors, and a second balanced input connected to the drain of the other transistor. The broadband output transformer has an input to output impedance ratio of 1:4.
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