METHOD FOR FABRICATING DOPED POLYSILICON LINES
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United States of America Patent
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app pub date -
Aug 8, 2007
filing date -
Oct 4, 2004
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Abstract
A method of fabricating polysilicon lines and polysilicon gates, the method of including: forming a dielectric layer on a top surface of a substrate; forming a polysilicon layer on a top surface of the dielectric layer; implanting the polysilicon layer with N-dopant species, the N-dopant species essentially contained within the polysilicon layer; implanting the polysilicon layer with a nitrogen containing species, the nitrogen containing species essentially contained within the polysilicon layer.
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