Hermetic Passivation Layer Structure for Capacitors with Perovskite or Pyrochlore Phase Dielectrics
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United States of America Patent
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Issued Date -
Jan 3, 2008
app pub date -
Jun 25, 2007
filing date -
Jun 28, 2006
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A thin-film capacitor structure fabricated on a substrate is provided. The thin-film capacitor includes a pyrochlore or perovskite alkali earth dielectric layer between a plurality of electrode layers. A pyrochlore or perovskite hydrogen-gettering barrier layer is deposited over the thin-film capacitor. A hermetic seal layer is deposited over the barrier layer by plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), or some other hydrogen-producing method. The hydrogen-gettering barrier layer prevents hydrogen from reacting with and degrading the properties of the dielectric material, thereby enhancing the durability and other features of the capacitor.
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