Bonded wafer avalanche photodiode and method for manufacturing same
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United States of America Patent
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Issued Date -
Jan 17, 2008
app pub date -
Mar 20, 2007
filing date -
Apr 19, 2006
priority date (Note) -
Abandoned
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Abstract
An avalanche photodiode includes a high quality electrooptically active substrate, a handle substrate bonded to the active substrate, and an avalanche photodiode active area formed in the high quality electrooptically active substrate including a high field region for generating avalanche current gain. By using a handle wafer bonded to the active substrate, the avalanche photodiode of the subject invention has a greater strength and thickness without the reduction of desirable electrical characteristics.
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