Highly dense monolithic three dimensional memory array and method for forming
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United States of America Patent
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Issued Date -
Jan 24, 2008
app pub date -
Jun 30, 2006
filing date -
Jun 30, 2006
priority date (Note) -
Abandoned
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Abstract
A method to form a highly dense monolithic three dimensional memory array is provided. In preferred embodiments, conductive or semiconductor spacers can be formed, then used as hard masks to pattern underlying layers, forming features at sublithographic pitch. Methods of the invention minimize photomasking steps and thus simplify fabrication.
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