Method and apparatus for forming an oxide layer on semiconductors
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United States of America Patent
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Issued Date -
Jan 24, 2008
app pub date -
Jul 20, 2006
filing date -
Jul 20, 2006
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Abandoned
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Abstract
A method and apparatus for forming an oxide layer on semiconductors using a combination of ultraviolet rays and heat. The apparatus comprises a chamber having a top surface and a bottom surface and defining a wafer holding cavity; an ultraviolet source at the top surface of said chamber; an infrared source at the bottom surface of the chamber; and an oxygen gas inlet for passing oxygen gas through the chamber. Oxygen gas entering the chamber through the oxygen gas inlet is ionized by ultraviolet rays from the ultraviolet source and reacts with the silicon wafer to create an oxide layer on the silicon wafer in the cavity. Infrared radiation from the infrared source heats the silicon wafer to accelerate the creation of the oxide layer on said silicon wafer.
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