Mixed-use memory array with different data states

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United States of America Patent

APP PUB NO 20080025069A1
SERIAL NO

11496870

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Abstract

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A mixed-use memory array with different data states is disclosed. In one preferred embodiment, a memory array is provided comprising a plurality of memory cells, each memory cell comprising a memory element comprising a switchable resistance material configurable to one of at least three resistivity states. A first set of memory cells uses X resistivity states to represent X respective data states, and a second set of memory cells uses Y resistivity states to represent Y respective data states, wherein X.noteq.Y.

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Patent Owner(s)

Patent OwnerAddress
WODEN TECHNOLOGIES INC251 LITTLE FALLS DRIVE WILMINGTON DE 19808

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Petti, Christopher J Mountain View, CA 148 4783
Scheuerlein, Roy E Cupertino, CA 251 12032

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